BCP52 /T3 NXP Semiconductors, BCP52 /T3 Datasheet - Page 18

• Manufacturer Part Number: BCP52 /T3
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE13
• Manufacturer: NXP Semiconductors

Specifications of BCP52 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 145 MHz
• Dc Collector/base Gain Hfe Min: 63 at 5 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 63 at 5 mA at 2 V
• Maximum Power Dissipation: 1000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BCP52,135

NXP Semiconductors
BCP52_BCX52_BC52PA
Product data sheet
Fig 26. Reflow soldering footprint SOT1061 (HUSON3)
2.3
Reflow soldering is the only recommended soldering method.
1.05
All information provided in this document is subject to legal disclaimers.
0.6
Rev. 9 — 18 October 2011
0.55
solder paste = solder lands
solder resist
BCP52; BCX52; BC52PA
occupied area
60 V, 1 A PNP medium power transistors
2.1
1.3
0.4
0.5
1.6
1.7
0.5 (2×)
0.4 (2×)
Dimensions in mm
0.5 (2×)
sot1061_fr
0.25
0.25
0.25
© NXP B.V. 2011. All rights reserved.
0.6 (2×)
1.1
1.2
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