2PA1576S /T3 NXP Semiconductors, 2PA1576S /T3 Datasheet - Page 5

• Manufacturer Part Number: 2PA1576S /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of 2PA1576S /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.15 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 270 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: 2PA1576S,135

NXP Semiconductors
9. Revision history
Table 7.
2PA1576_6
Product data sheet
Document ID
2PA1576_6
Modifications:
2PA1576_5
2PA1576_4
2PA1576_3
2PA1576_2
Revision history
Release date
20091117
20041124
19990531
19970328
19931213
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 1 “Package outline SOT323
Rev. 06 — 17 November 2009
Data sheet status
Product data sheet
Product data sheet
Product specification
Objective specification
n.a.
(SC-70)”: updated
Change notice
-
-
-
-
-
PNP general-purpose transistor
Supersedes
2PA1576_5
2PA1576_4
2PA1576_3
2PA1576_2
n.a.
2PA1576
© NXP B.V. 2009. All rights reserved.
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