2PA1576S /T3 NXP Semiconductors, 2PA1576S /T3 Datasheet - Page 4

• Manufacturer Part Number: 2PA1576S /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of 2PA1576S /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.15 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 270 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: 2PA1576S,135

NXP Semiconductors
8. Package outline
Fig 1.
2PA1576_6
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Package outline SOT323 (SC-70)
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
Rev. 06 — 17 November 2009
REFERENCES
1.3
e
w
B
M
0.65
B
e 1
JEITA
SC-70
scale
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
PNP general-purpose transistor
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
2PA1576
© NXP B.V. 2009. All rights reserved.
X
v
ISSUE DATE
04-11-04
06-03-16
M
A
SOT323
4 of 7