PMBT3904 /T3 NXP Semiconductors, PMBT3904 /T3 Datasheet - Page 6

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PMBT3904 /T3

Manufacturer Part Number
PMBT3904 /T3
Description
Transistors Bipolar - BJT TRANS SW TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3904 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
60 at 0.1 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.2 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMBT3904,235
NXP Semiconductors
2004 Jan 12
handbook, full pagewidth
NPN switching transistor
V
R1 = 56 Ω; R2 = 2.5 kΩ; R
V
Oscilloscope: input impedance Z
i
BB
= 5 V; T = 500 µs; t
= −1.9 V; V
CC
= 3 V.
p
= 10 µs; t
B
= 3.9 kΩ; R
i
r
= 50 Ω.
= t
f
≤ 3 ns.
oscilloscope
C
= 270 Ω.
V i
Fig.7 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
6
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
oscilloscope
PMBT3904
Product data sheet

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