PMBT3904 /T3 NXP Semiconductors, PMBT3904 /T3 Datasheet - Page 2

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PMBT3904 /T3

Manufacturer Part Number
PMBT3904 /T3
Description
Transistors Bipolar - BJT TRANS SW TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3904 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
60 at 0.1 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.2 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMBT3904,235
NXP Semiconductors
FEATURES
• Collector current capability I
• Collector-emitter voltage V
APPLICATIONS
• General switching and amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT3906.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 12
PMBT3904
PMBT3904
NUMBER
NPN switching transistor
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
NAME
CEO
C
plastic surface mounted package; 3 leads
= 200 mA
= 40 V.
MARKING CODE
*1A
(1)
DESCRIPTION
2
PACKAGE
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
C
SYMBOL
CEO
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
collector-emitter voltage
collector current (DC)
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM255
Product data sheet
PMBT3904
1
40
200
MAX.
VERSION
SOT23
3
2
V
mA
UNIT

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