BCM857BS /T3 NXP Semiconductors, BCM857BS /T3 Datasheet - Page 5

• Manufacturer Part Number: BCM857BS /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCM857BS /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 175 MHz
• Dc Collector/base Gain Hfe Min: 250 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCM857BS,135

NXP Semiconductors
BCM857BV_BS_DS_6
Product data sheet
Table 8.
T
[1]
[2]
[3]
[4]
Symbol
f
NF
Per device
h
V
T
amb
FE1
BE1
V
V
The smaller of the two values is taken as the numerator.
The smaller of the two values is subtracted from the larger value.
/h
= 25 C unless otherwise specified
BEsat
BE
V
FE2
BE2
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
Characteristics
Parameter
transition frequency
noise figure
h
V
FE
BE
matching
matching
Rev. 06 — 28 August 2009
…continued
Conditions
V
I
f = 100 MHz
V
I
R
f = 10 Hz to
15.7 kHz
V
I
R
f = 1 kHz;
B = 200 Hz
V
I
V
I
C
C
C
C
C
CE
CE
CE
CE
CE
S
S
= 10 mA;
= 0.2 mA;
= 0.2 mA;
= 2 mA
= 2 mA
= 2 k ;
= 2 k ;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
PNP/PNP matched double transistors
BCM857BV/BS/DS
[3]
[4]
Min
100
-
-
0.9
-
Typ
175
1.6
3.1
1
-
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
-
2
Unit
MHz
dB
dB
mV
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