BCM857BS /T3 NXP Semiconductors, BCM857BS /T3 Datasheet - Page 11

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BCM857BS /T3

Manufacturer Part Number
BCM857BS /T3
Description
Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCM857BS /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
175 MHz
Dc Collector/base Gain Hfe Min
250 at 10 uA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BCM857BS,135
NXP Semiconductors
BCM857BV_BS_DS_6
Product data sheet
Fig 16. Wave soldering footprint SOT363 (SC-88)
Fig 17. Reflow soldering footprint SOT457 (SC-74)
4.5
3.30
Dimensions in mm
2.825
1.3
0.95
Rev. 06 — 28 August 2009
2.45
5.3
1.3
3.45
1.95
1.60
1.70
3.10
3.20
1.5
1.5
msc422
0.3
0.45 0.55
PNP/PNP matched double transistors
BCM857BV/BS/DS
2.5
direction during soldering
Dimensions in mm
© NXP B.V. 2009. All rights reserved.
solder lands
preferred transport
solder resist
occupied area
solder paste
solder lands
solder resist
occupied area
sot363_fw
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