BCV65 T/R NXP Semiconductors, BCV65 T/R Datasheet - Page 10
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BCV65 T/R
Manufacturer Part Number
BCV65 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BCV65_TR.pdf
(11 pages)
Specifications of BCV65 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
30 V
Dc Collector/base Gain Hfe Min
75 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-143
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BCV65,215
NXP Semiconductors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BCV65
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 July 2010
salesaddresses@nxp.com
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
NPN/PNP general-purpose transistor
© NXP B.V. 2010. All rights reserved.
BCV65
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