BC817-25W /T3 NXP Semiconductors, BC817-25W /T3 Datasheet - Page 8

• Manufacturer Part Number: BC817-25W /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC817-25W /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC817-25W,135

NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 7.
Fig 9.
V
CEsat
(V)
10
10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−1
−2
1
10
I
Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
I
Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
−1
C
C
(1) (2)
(3)
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
1
10
V
CEsat
(V)
10
10
10
−1
−2
−3
10
1
10
2
−1
I
006aaa137
C
(mA)
Rev. 06 — 17 November 2009
10
1
3
10
(1)
(3)
Fig 8.
V
BC817; BC817W; BC337
(2)
CEsat
(V)
10
10
10
(1) T
(2) T
(3) T
45 V, 500 mA NPN general-purpose transistors
−1
−2
−3
10
1
10
I
Selection -25: Collector-emitter saturation
voltage as a function of collector current;
typical values
2
−1
C
amb
amb
amb
/I
I
006aaa139
C
B
(mA)
= 10
= 150 °C
= 25 °C
= −55 °C
10
1
3
10
(1)
(3)
(2)
10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa138
C
(mA)
10
3
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