BC817-25W /T3 NXP Semiconductors, BC817-25W /T3 Datasheet - Page 2

• Manufacturer Part Number: BC817-25W /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC817-25W /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC817-25W,135

NXP Semiconductors
2. Pinning information
BC817_BC817W_BC337_6
Product data sheet
Table 3.
Pin
SOT23
1
2
3
SOT323
1
2
3
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
Pinning
Description
base
emitter
collector
base
emitter
collector
emitter
base
collector
emitter
base
collector
emitter
base
collector
Rev. 06 — 17 November 2009
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Simplified outline
1
1
001aab348
3
001aab347
001aab447
sot323_so
3
2
2
1
2
3
1
2
3
1
2
3
Symbol
© NXP B.V. 2009. All rights reserved.
1
1
2
2
2
sym021
sym021
sym026
sym026
sym026
3
2
3
2
3
1
3
1
3
1
2 of 19