BC817-25W /T3 NXP Semiconductors, BC817-25W /T3 Datasheet - Page 14

• Manufacturer Part Number: BC817-25W /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC817-25W /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC817-25W,135

NXP Semiconductors
Fig 16. Package outline SOT54A
BC817_BC817W_BC337_6
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54A
D
5.2
5.0
A
d
0.48
0.40
b
E
3
1
2
0.66
0.55
b 1
IEC
b 1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
Rev. 06 — 17 November 2009
REFERENCES
0
4.2
3.6
E
A
5.08
e
JEITA
scale
2.5
2.54
e 1
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
14.5
12.7
5 mm
L
L 2
L 1
L
max.
1
3
(1)
L 2
3
2
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
b
ISSUE DATE
c
97-05-13
04-06-28
e 1
e
SOT54A
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