PZTA92 T/R NXP Semiconductors, PZTA92 T/R Datasheet - Page 3

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PZTA92 T/R

Manufacturer Part Number
PZTA92 T/R
Description
Transistors Bipolar - BJT TRANS HV TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PZTA92 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
300 V
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
50 MHz
Dc Collector/base Gain Hfe Min
25 at 1 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Continuous Collector Current
0.1 A
Maximum Power Dissipation
1200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
PZTA92,115
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 14
R
R
I
I
h
V
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
PNP high-voltage transistor
th j-a
th j-s
c
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
transition frequency
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
E
C
C
C
C
C
C
E
C
= 0; V
= 0; V
= 0; V
= −1 mA; V
= −10 mA; V
= −30 mA; V
= −20 mA; I
= −20 mA; I
= −10 mA; V
CB
CB
BE
3
= −200 V
= −5 V
= −20 V; f = 1 MHz
CONDITIONS
CE
B
B
CE
CE
CE
= −2 mA
= −2 mA
= −10 V; note 1
= −10 V; note 1
= −10 V; note 1
= −20 V; f = 100 MHz
note 1
CONDITIONS
25
40
25
50
MIN.
VALUE
104
23
Product specification
−20
−100
−500
−900
6
MAX.
PZTA92
UNIT
K/W
K/W
2
nA
nA
mV
mV
pF
MHz
.
UNIT

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