PBSS305PX T/R NXP Semiconductors, PBSS305PX T/R Datasheet - Page 9

• Manufacturer Part Number: PBSS305PX T/R
• Description: Transistors Bipolar - BJT PNP 80V 4A
• Manufacturer: NXP Semiconductors

Specifications of PBSS305PX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 80 V
• Collector- Emitter Voltage Vceo Max: - 80 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 330 mV
• Maximum Dc Collector Current: - 8 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 45 at - 5 A at - 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 4 A
• Dc Current Gain Hfe Max: 280 at - 0.5 A at - 2 V
• Maximum Power Dissipation: 2.1 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS305PX,115

NXP Semiconductors
8. Test information
PBSS305PX_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
− I
− I
B
C
V
CC
= −12.5 V; I
oscilloscope
t
d
t
on
Rev. 02 — 8 December 2009
C
V
= −3 A; I
t
I
r
(probe)
450 Ω
Bon
= −0.15 A; I
R1
R2
R
B
V
BB
Boff
80 V, 4.0 A PNP low V
= 0.15 A
R
C
V
CC
DUT
V
o
mgd624
− I
(probe)
450 Ω
Bon
t
− I
s
(100 %)
Boff
t
off
PBSS305PX
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
− I
006aaa266
C
(100 %)
t
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