PBSS305PX T/R NXP Semiconductors, PBSS305PX T/R Datasheet - Page 8

• Manufacturer Part Number: PBSS305PX T/R
• Description: Transistors Bipolar - BJT PNP 80V 4A
• Manufacturer: NXP Semiconductors

Specifications of PBSS305PX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 80 V
• Collector- Emitter Voltage Vceo Max: - 80 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 330 mV
• Maximum Dc Collector Current: - 8 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 45 at - 5 A at - 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 4 A
• Dc Current Gain Hfe Max: 280 at - 0.5 A at - 2 V
• Maximum Power Dissipation: 2.1 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS305PX,115

NXP Semiconductors
PBSS305PX_2
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
−10
−10
CEsat
(V)
(Ω)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
−10
10
10
−1
10
−1
−2
−1
−2
−10
−10
3
2
1
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
C
C
−1
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
−1
−1
−10
−10
(1)
(2)
(3)
−10
−10
2
2
−10
−10
(1)
(2)
(3)
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3
I
3
I
C
C
(mA)
(mA)
Rev. 02 — 8 December 2009
−10
−10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
−10
−10
−10
CEsat
CEsat
(Ω)
(V)
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
−10
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
T
function of collector current; typical values
T
function of collector current; typical values
80 V, 4.0 A PNP low V
C
C
C
C
C
C
−1
−1
amb
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
−1
−1
−10
−10
(1)
(2)
(3)
−10
−10
PBSS305PX
2
2
CEsat
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
006aaa632
006aaa636
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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