PUMZ2 T/R NXP Semiconductors, PUMZ2 T/R Datasheet - Page 7

• Manufacturer Part Number: PUMZ2 T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PUMZ2 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 7 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 120 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 0.15 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PUMZ2,115

NXP Semiconductors
9. Revision history
Table 9.
PIMZ2_PUMZ2_6
Product data sheet
Document ID
PIMZ2_PUMZ2_6
Modifications:
PIMZ2_PUMZ2_5
PIMZ2_PUMZ2_4
PIMZ2_2
PIMZ2_1
Revision history
Release date
20091117
20041124
20031217
20030714
20030602
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3
Figure 1 “Package outline SOT457
Figure 2 “Package outline SOT363
“Pinning”: updated
Rev. 06 — 17 November 2009
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
Objective specification
(SC-74)”: updated
(SC-88)”: updated
NPN/PNP general-purpose double transistors
Change notice
-
-
-
-
-
PIMZ2; PUMZ2
Supersedes
PIMZ2_PUMZ2_5
PIMZ2_PUMZ2_4
PIMZ2_2
PIMZ2_1
-
© NXP B.V. 2009. All rights reserved.
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