PUMZ2 T/R NXP Semiconductors, PUMZ2 T/R Datasheet - Page 2

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PUMZ2 T/R

Manufacturer Part Number
PUMZ2 T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMZ2 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Collector-emitter Saturation Voltage
7 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
120 at 1 mA at 6 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
0.15 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PUMZ2,115
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PIMZ2_PUMZ2_6
Product data sheet
Table 3.
Table 4.
Table 5.
[1]
Pin
PIMZ2 (SOT457)
1
2
3
4
5
6
PUMZ2 (SOT363)
1
2
3
4
5
6
Type number
PIMZ2
PUMZ2
Type number
PIMZ2
PUMZ2
* = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Description
collector TR2
emitter TR2
collector TR1
emitter TR1
base TR1
base TR2
emitter TR1
base TR1
base TR2
collector TR2
emitter TR2
collector TR1
Package
Name
SC-74
SC-88
Rev. 06 — 17 November 2009
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
NPN/PNP general-purpose double transistors
Marking code
M6
GZ*
Simplified outline
[1]
1
1
6
6
PIMZ2; PUMZ2
5
2
2
5
4
3
4
3
Symbol
© NXP B.V. 2009. All rights reserved.
TR1
1
6
1
6
TR2
Version
SOT457
SOT363
5
2
5
2
TR2
sym082
sym083
TR1
4
4
3
3
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