MX0912B351Y TRAY NXP Semiconductors, MX0912B351Y TRAY Datasheet - Page 7

• Manufacturer Part Number: MX0912B351Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of MX0912B351Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 21 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439A
• Maximum Power Dissipation: 960000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MX0912B351Y,114

Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
0.635
15
30
11
2
L1
Fig.6 Broadband test circuit.
C5
5
C3
7
3
24
5
7
1.5
4.5
21.5
5.5
5
C6
3.5
5
30
C2
7.5
0.7
L2
2.5
3.5 1
3.2
MLC085
V CC
MLC086
C1
40
MX0912B351Y
Product specification