MX0912B351Y TRAY NXP Semiconductors, MX0912B351Y TRAY Datasheet - Page 3

• Manufacturer Part Number: MX0912B351Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of MX0912B351Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 21 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439A
• Maximum Power Dissipation: 960000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MX0912B351Y,114

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
1997 Feb 19
handbook, halfpage
V
V
V
V
I
P
T
T
T
SYMBOL
C
stg
j
sld
CBO
CES
CEO
EBO
tot
NPN microwave power transistor
t
Fig.2
p
= 10 s;
1000
P tot
(W)
800
600
400
200
0
50
Maximum power dissipation derating as a
function of mounting base temperature.
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
(peak power)
storage temperature
operating junction temperature
soldering temperature
= 10%; P
0
tot max
PARAMETER
= 960 W.
100
T mb ( C)
MGL054
open emitter
R
open base
open collector
t
T
t
p
mb
200
BE
10 s; note 1
10 s;
= 75 C; t
= 0
3
p
10%
CONDITIONS
10 s;
10%
MX0912B351Y
MIN.
65
Product specification
65
60
20
3
21
960
+200
200
235
MAX.
V
V
V
V
A
W
C
C
C
UNIT