MT46H8M32LFB5-5 IT:H Micron Technology Inc, MT46H8M32LFB5-5 IT:H Datasheet - Page 63
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MT46H8M32LFB5-5 IT:H
Manufacturer Part Number
MT46H8M32LFB5-5 IT:H
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H16M16LFBF-5H.pdf
(96 pages)
Specifications of MT46H8M32LFB5-5 IT:H
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
180mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 26: Terminating a READ Burst
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
CK
CK
3
3
Notes:
Bank a,
Col n
Bank a,
Col n
READ
READ
T0
T0
1. BL = 4, 8, or 16.
2. BST = BURST TERMINATE command; page remains open.
3. D
4. Shown with nominal
5. CKE = HIGH.
1
1
OUT
CL = 2
n = data-out from column n.
BST
BST
T1
T1
CL = 3
2
2
T1n
D
t
OUT
AC,
T2
NOP
T2
NOP
63
t
DQSCK, and
D
T2n
OUT
T2n
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3
NOP
T3
NOP
t
DQSQ.
D
Don’t Care
OUT
T3n
T4
T4
NOP
NOP
Transitioning Data
©2008 Micron Technology, Inc. All rights reserved.
READ Operation
T5
T5
NOP
NOP
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