BC869 /T3 NXP Semiconductors, BC869 /T3 Datasheet - Page 10

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BC869 /T3

Manufacturer Part Number
BC869 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC869 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
32 V
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
140 MHz
Dc Collector/base Gain Hfe Min
50 at 5 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Maximum Power Dissipation
1200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BC869,135
NXP Semiconductors
BCP69_BC869_BC69PA
Product data sheet
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
–1
–1
1
1
3
2
3
2
10
10
FR4 PCB, single-sided copper, standard footprint
typical values
FR4 PCB, single-sided copper, mounting pad for collector 1 cm
typical values
–5
–5
0.25
0.25
duty cycle = 1
0
0.5
0.1
0.02
duty cycle = 1
0
0.5
0.1
0.02
0.75
0.33
0.05
0.01
0.75
0.33
0.05
0.01
0.2
0.2
10
10
–4
–4
10
10
–3
–3
All information provided in this document is subject to legal disclaimers.
10
10
–2
–2
Rev. 7 — 12 October 2011
10
10
–1
–1
2
BCP69; BC869; BC69PA
1
1
20 V, 2 A PNP medium power transistors
10
10
10
10
2
2
© NXP B.V. 2011. All rights reserved.
t
t
p
p
006aac683
006aac684
(s)
(s)
10
10
3
3
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