BF621 T/R NXP Semiconductors, BF621 T/R Datasheet - Page 5

• Manufacturer Part Number: BF621 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BF621 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 60 MHz
• Dc Collector/base Gain Hfe Min: 50 at 25 mA at 20 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 0.05 A
• Maximum Power Dissipation: 1100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BF621,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2004 Dec 14
R
R
PNP high-voltage transistors
th(j-a)
th(j-s)
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
SYMBOL
(K/W)
Z
th
10
10
10
1
3
2
10
−5
(10)
(1)
(3)
(5)
(6)
(7)
(8)
(9)
(2)
(4)
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
(3) δ = 0.5.
(4) δ = 0.33.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
10
−4
PARAMETER
10
−3
(5) δ = 0.2.
(6) δ = 0.1.
10
−2
(7) δ = 0.05.
(8) δ = 0.02.
10
5
−1
in free air
note 1
note 2
note 3
CONDITIONS
(9) δ = 0.01.
(10) δ = 0.
1
10
VALUE
BF621; BF623
250
156
113
10
30
2
Product data sheet
t
p
006aaa235
(s)
10
UNIT
3
K/W
K/W
K/W
K/W
2
2
.
.