BF621 T/R NXP Semiconductors, BF621 T/R Datasheet
BF621 T/R
Specifications of BF621 T/R
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BF621 T/R Summary of contents
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... DATA SHEET dbook, halfpage BF621; BF623 PNP high-voltage transistors Product data sheet Supersedes data of 1999 Apr 21 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 14 ...
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... NXP Semiconductors PNP high-voltage transistors FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Video output stages. DESCRIPTION PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BF620 and BF622. MARKING TYPE NUMBER BF621 BF623 ORDERING INFORMATION ...
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... NXP Semiconductors PNP high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BF621 BF623 V collector-emitter voltage CEO BF621 BF623 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...
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... NXP Semiconductors PNP high-voltage transistors 1600 P tot (mW) 1200 (1) (2) 800 (3) 400 0 −75 − (1) FR4 PCB mounting pad for collector. 2 (2) FR4 PCB mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Dec 14 006aaa238 75 125 ...
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... NXP Semiconductors PNP high-voltage transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th(j-a) ambient R thermal resistance from junction to th(j-s) soldering point Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector ...
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... NXP Semiconductors PNP high-voltage transistors (K/W) ( (2) (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 −5 − Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm (1) δ (3) δ = 0.5. (2) δ = 0.75. (4) δ = 0.33. Fig.4 Transient thermal impedance as a function of pulse time; typical values. ...
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... NXP Semiconductors PNP high-voltage transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage CEsat C feedback capacitance re f transition frequency T 2004 Dec 14 CONDITIONS = −200 − ...
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... NXP Semiconductors PNP high-voltage transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...