IS42S16100E-7BLI ISSI, Integrated Silicon Solution Inc, IS42S16100E-7BLI Datasheet - Page 5
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IS42S16100E-7BLI
Manufacturer Part Number
IS42S16100E-7BLI
Description
IC SDRAM 16MBIT 143MHZ 60BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Specifications of IS42S16100E-7BLI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
16M (1M x 16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-BGA
Organization
1Mx16
Density
16Mb
Address Bus
12b
Access Time (max)
6/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
Mini BGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1070
IS42S16100E-7BLI
IS42S16100E-7BLI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S16100E-7BLI
Manufacturer:
TI
Quantity:
45
Company:
Part Number:
IS42S16100E-7BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S16100E-7BLI
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S16100E-7BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S16100E, IC42S16100E
DC RECOMMENDED OPERATING CONDITIONS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
ABSOLUTE MAXIMUM RATINGS
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/22/08
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
V
Symbol
V
V
V
V
P
I
T
T
cs
ih
Symbol
opr
stg
out
iN
iN
dd max
ddq max
iN
d max
dd
(max) = V
1
2
V
V
, V
ih
il
ddq
ddq
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: DQ0-DQ15
+ 2.0V with a pulse width ≤ 3 ns.
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
(4)
(3)
(1)
(1,2)
Min.
-0.3
3.0
2.0
(At T
a
= 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Typ.
3.3
—
—
(2)
(
At T
V
dd
Max.
a
+0.8
3.6
= 0 to +70°C)
+ 0.3
Com
Ind.
Unit
V
V
V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–55 to +150 °C
-40 to +85
0 to +70
Rating
50
Typ.
1
—
—
—
Unit
W
mA
°C
°C
Max.
4
4
5
Unit
pF
pF
pF
5