BT136X-600E/DG,127 NXP Semiconductors, BT136X-600E/DG,127 Datasheet - Page 3

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BT136X-600E/DG,127

Manufacturer Part Number
BT136X-600E/DG,127
Description
Triacs 4Q TRIAC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT136X-600E/DG,127

Rohs
yes
Mounting Style
Through Hole
Package / Case
TO-220F-3
Factory Pack Quantity
50
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
sensitive gate
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
isol
isol
th j-hs
th j-a
= 25 ˚C unless otherwise specified
D
/dt
Semiconductors
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; gate open circuit
I
dI
T
TM
D
D
D
D
D
D
DM
G
= 5 A
/dt = 5 A/μs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 6 A; V
= 67% V
CONDITIONS
waveform;
R.H. ≤ 65% ; clean and dustfree
DRM(max)
D
T
GT
GT
T
T
DRM(max)
= V
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
= 0.1 A; T
j
2
DRM(max)
= 125 ˚C
; T
j
= 125 ˚C;
; I
j
G
= 125 ˚C
= 0.1 A;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
MIN.
MIN.
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BT136X series E
TYP.
TYP.
TYP.
TYP.
10
2.5
4.0
5.0
3.0
2.5
4.0
2.2
1.4
0.7
0.4
0.1
55
11
10
50
-
2
Product specification
-
-
MAX.
2500
MAX.
MAX.
MAX.
1.70
5.5
7.2
1.5
0.5
10
10
10
25
15
20
15
20
15
-
-
-
-
-
Rev 1.400
UNIT
UNIT
UNIT
UNIT
V/μs
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
pF
μs
V
V
V
V

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