BT136X-600E,127 NXP Semiconductors, BT136X-600E,127 Datasheet

BT136X-600E,127

Manufacturer Part Number

BT136X-600E,127

Description

TRIAC 600V 4A SOT186A

Manufacturer

NXP Semiconductors

Datasheet

1.BT136X-600E127.pdf (6 pages)

Specifications of BT136X-600E,127

Package / Case

TO-220-3 Full Pack

Triac Type

Logic - Sensitive Gate

Mounting Type

Through Hole

Configuration

Single

Current - Hold (ih) (max)

15mA

Voltage - Off State

600V

Current - Gate Trigger (igt) (max)

10mA

Current - Non Rep. Surge 50, 60hz (itsm)

25A, 27A

Current - On State (it (rms)) (max)

Voltage - Gate Trigger (vgt) (max)

1.5V

Current - On State (it (rms) (max)

Rated Repetitive Off-state Voltage Vdrm

600 V

On-state Rms Current (it Rms)

4 A

Off-state Leakage Current @ Vdrm Idrm

0.1 mA

Gate Trigger Voltage (vgt)

0.7 V

Gate Trigger Current (igt)

11 mA

Forward Voltage Drop

1.4 V

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

934038090127
BT136X-600E
BT136X-600E

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Philips Semiconductors

GENERAL DESCRIPTION

Passivated, sensitive gate triacs in a

full pack plastic envelope, intended for

use in general purpose bidirectional

switching

applications, where high sensitivity is

required in all four quadrants.

PINNING - SOT186A

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/ s.

June 2001

Triacs

sensitive gate

SYMBOL PARAMETER

T(RMS)

TSM

case isolated

stg

DRM

G(AV)

/dt

main terminal 1

main terminal 2

gate

and

Repetitive peak off-state

voltages

RMS on-state current

Non-repetitive peak

on-state current

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

t for fusing

DESCRIPTION

phase

control

QUICK REFERENCE DATA

PIN CONFIGURATION

CONDITIONS

full sine wave; T

surge

t = 20 ms

t = 16.7 ms

t = 10 ms

over any 20 ms period

SYMBOL

T(RMS)

TSM

DRM

/dt = 0.2 A/ s

= 6 A; I

= 0.2 A;

case

PARAMETER

Repetitive peak off-state

voltages

RMS on-state current

Non-repetitive peak on-state

current

1 2 3

= 25 ˚C prior to

92 ˚C

T2+ G+

T2+ G-

T2- G-

T2- G+

BT136X-

MIN.

-40

SYMBOL

-600

600

MAX.

600E

600

BT136X series E

MAX.

Product specification

150

125

3.1

0.5

-800

800

MAX.

800E

800

Rev 1.400

UNIT

A/ s

UNIT

˚C

Related parts for BT136X-600E,127

BT136X-600E,127 Summary of contents

Page 1

... T 92 ˚C hs full sine wave ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT136X series E MAX. MAX. UNIT BT136X- 600E 800E 600 800 SYMBOL T2 G MIN. MAX. UNIT -600 -800 1 - 600 800 ...

Page 2

... T2 400 0 125 ˚ 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / Product specification BT136X series E MIN. TYP. MAX. UNIT - - 2500 MIN. TYP. MAX. UNIT - - 5.5 K 7.2 K K/W MIN. TYP. MAX. UNIT - 3.0 15 ...

Page 3

... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 time T 1.2 1 0.8 0.6 0.4 1000 - Product specification BT136X series E BT136X 100 Ths / C versus heatsink temperature T hs 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 92˚C. hs VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...

Page 4

... I (25˚C), Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT136X series E typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-hs pulse width 100 /dt versus junction temperature T ...

Page 5

... Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 2001 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 5 Product specification BT136X series E 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.400 1.0 (2x) 0.9 0.7 ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT136X series E Rev 1.400 ...

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