IS42S32200E-6B-TR ISSI, Integrated Silicon Solution Inc, IS42S32200E-6B-TR Datasheet - Page 37

• Manufacturer Part Number: IS42S32200E-6B-TR
• Description: IC SDRAM 64MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S32200E-6B-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S32200E
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. 00D
06/02/08
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
AC TEST CONDITIONS
Input Load
SYMBOL
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Note:
1. If CL = 2, the minimum t
CCD
CKED
PED
DQD
DQM
DQZ
DWD
DAL
DPL
BDL
CDL
RDL
MRD
ROH
OUTPUT
INPUT
CLK
2.75V
0.25V
2.75V
0.25V
1.5V
1.5V
PARAMETER
Clock Cycle Time
Operating Frequency
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command
to ACTIVE or REFRESH command
Data-out to high-impedance from
PRECHARGE command
t
OH
t
CS
1.5V
CK
t
CH
t
2
CHI
is 10ns.
(Input/Output Reference Level: 1.5V)
t
AC
t
CK
t
CL
1.5V
1-800-379-4774
Output Load
CONDITION
CL=3
CL=3
CL=2
CL = 3
CL = 2
I/O
(1)
200
-5
5
1
1
1
0
0
2
0
5
4
2
1
1
2
2
3
2
30 pF
50
166
-6
6
1
1
1
0
0
2
0
5
4
2
1
1
2
2
3
2
143
-7
7
1
1
1
0
0
2
0
5
4
2
1
1
2
2
3
2
+1.5V
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
37