2PB709BSL,215 NXP Semiconductors, 2PB709BSL,215 Datasheet - Page 7

• Manufacturer Part Number: 2PB709BSL,215
• Description: Transistors Bipolar - BJT PNP -50 V -200 mA
• Manufacturer: NXP Semiconductors

Specifications of 2PB709BSL,215

• Rohs: yes
• Transistor Polarity: PNP
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Dc Collector/base Gain Hfe Min: 210
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: - 200 mA
• Maximum Power Dissipation: 250 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
8. Test information
9. Package outline
2PB709BRL_2PB709BSL
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 9.
Package outline SOT23 (TO-236AB)
All information provided in this document is subject to legal disclaimers.
2.5
2.1
Dimensions in mm
Rev. 1 — 28 June 2010
1.4
1.2
1
2PB709BRL; 2PB709BSL
3.0
2.8
1.9
50 V, 200 mA PNP general-purpose transistors
3
2
0.48
0.38
0.45
0.15
1.1
0.9
0.15
0.09
04-11-04
© NXP B.V. 2010. All rights reserved.
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