2PB709BSL,215 NXP Semiconductors, 2PB709BSL,215 Datasheet - Page 3

• Manufacturer Part Number: 2PB709BSL,215
• Description: Transistors Bipolar - BJT PNP -50 V -200 mA
• Manufacturer: NXP Semiconductors

Specifications of 2PB709BSL,215

• Rohs: yes
• Transistor Polarity: PNP
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Dc Collector/base Gain Hfe Min: 210
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: - 200 mA
• Maximum Power Dissipation: 250 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
6. Thermal characteristics
2PB709BRL_2PB709BSL
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7.
[1]
Symbol
P
T
T
T
Symbol
R
R
Fig 1.
j
amb
stg
tot
th(j-a)
th(j-sp)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
FR4 PCB, standard footprint
Power derating curve
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
Limiting values
Thermal characteristics
All information provided in this document is subject to legal disclaimers.
(mW)
P
tot
300
200
100
Rev. 1 — 28 June 2010
0
−75
…continued
−25
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
25
T
Conditions
Conditions
in free air
amb
≤ 25 °C
75
125
T
006aaa990
amb
[1]
[1]
(°C)
175
Min
-
-
−55
−65
Min
-
-
Typ
-
-
© NXP B.V. 2010. All rights reserved.
Max
250
150
+150
+150
Max
500
140
Unit
mW
°C
°C
°C
Unit
K/W
K/W
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