BCV 61B E6433 Infineon Technologies, BCV 61B E6433 Datasheet - Page 2

• Manufacturer Part Number: BCV 61B E6433
• Description: Transistors Bipolar - BJT NPN Silicon Double Transistor 30V 100mA
• Manufacturer: Infineon Technologies

Specifications of BCV 61B E6433

• Rohs: yes
• Part # Aliases: BCV61BE6433HTMA1 BCV61BE6433XT SP000010888

Electrical Characteristics at T
Parameter
DC Characteristics of T1
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
DC current gain
I
DC current gain
I
I
Collector-emitter saturation voltage
I
I
Base-emitter saturation voltage
I
I
Base-emitter voltage
I
I
1 Puls test: t ≤ 300 µs, D = 2%
C
C
E
C
C
C
C
C
C
C
C
C
CB
CB
= 10 µA, I
= 10 mA, I
= 10 µA, I
= 0.1 mA, V
= 2 mA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 30 V, I
= 30 V, I
C
E
CE
CE
CE
B
B
B
E
E
CE
= 0
= 0
B
B
CE
= 0
= 0.5 mA
= 0.5 mA
= 0
= 0 , T
1)
1)
= 5 V, BCV61B
= 5 V, BCV61C
= 5 V
= 5 mA
= 5 mA
= 5 V
= 5 V
1)
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
1)
2
Symbol
V
V
V
I
I
h
h
V
V
V
CBO
CBO
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
BE(ON)
min.
200
420
580
100
30
30
6
-
-
-
-
-
-
-
Values
290
520
200
700
900
660
typ.
90
-
-
-
-
-
-
-
max.
450
800
250
600
700
770
15
2011-10-13
5
-
-
-
-
-
-
BCV61
Unit
V
nA
µA
-
mV