IS45S16400E-7TLA2-TR ISSI, Integrated Silicon Solution Inc, IS45S16400E-7TLA2-TR Datasheet - Page 51

• Manufacturer Part Number: IS45S16400E-7TLA2-TR
• Description: IC SDRAM 64MBIT 143MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS45S16400E-7TLA2-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 50-TSOPII
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 110mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS45S16400E
ALTERNATING BANK WRITE ACCESS
Notes:
1. burst length = 4
2. A
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
01/13/2010
DQML, DQMH
COMMAND
A0-A9, A11
8
, A
BA0, BA1
9
DQM/
, and A
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
11
AS
AS
AS
ACTIVE
ROW
ROW
T0
= "Don't Care"
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
t
RCD
RRD
RAS
RC
t
CK
- BANK 0
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
COLUMN m
BANK 0
DS
WRITE
D
T2
IN
t
CMH
t
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
BANK 1
DS
ACTIVE
ROW
ROW
D
T4
IN
t
m+
DH
2
t
RCD
t
DS
D
- BANK 1
ENABLE AUTO PRECHARGE
T5
IN
NOP
m+
t
DH
t
WR
3
- BANK 0
t
COLUMN b
DS
BANK 1
WRITE
T6
D
IN
t
DH
b
(2)
t
DS
D
t
RP
T7
NOP
IN
t
- BANK 0
b+
DH
1
t
DS
D
T8
NOP
IN
t
b+
DH
2
t
DS
ACTIVE
DON'T CARE
BANK 0
D
T9
ROW
ROW
IN
t
b+
t
t
DH
RCD
WR
3
- BANK 1
- BANK 0
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