IS45S16400E-7TLA2-TR ISSI, Integrated Silicon Solution Inc, IS45S16400E-7TLA2-TR Datasheet - Page 12

• Manufacturer Part Number: IS45S16400E-7TLA2-TR
• Description: IC SDRAM 64MBIT 143MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS45S16400E-7TLA2-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 50-TSOPII
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 110mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS45S16400E
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time in-
2. Icc
3. Input signal chnage once per 30ns.
12
Symbol Parameter
i
i
V
V
i
i
I
i
I
i
i
i
I
i
i
i
il
ol
cc1
cc2p
cc2ps
cc2N
cc2Ns
cc3p
cc3ps
cc3N
cc3Ns
cc4
cc5
cc6
oh
ol
creases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
to suppress power supply voltage noise (voltage drops) due to these transient currents.
(3)
(3)
1
and Icc
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
(1)
(1,2)
Test Condition
0V ≤ V
the tested pin at 0V
Output is disabled, 0V ≤ V
i
i
One Bank Operation,
Burst Length=1
t
I
CKE ≤ V
CKE ≥ V
CKE ≤ V
CKE ≥ V
t
I
BL = 4; 4 banks activated
t
t
CKE ≤ 0.2V
out
out
rc
out
ck
out
rc
clk
≥ t
= t
= t
= t
= –2 mA
= +2 mA
= 0mA
= 0mA
rc
ck
rc
iN
clk
il
ih
il
ih
≤ V
(min.)
(
(
miN
miN
(
(
(
(
(
max
miN
miN
miN
max
DD
(Recommended Operation Conditions unless otherwise noted.)
)
)
)
, with pins other than
)
)
)
)
out
CAS latency = 3
CAS latency = 3
1
CAS latency = 3 A1
≤ V
t
t
t
t
t
t
t
t
ck
ck
ck
ck
ck
ck
ck
ck
and Icc
Integrated Silicon Solution, Inc. — www.issi.com
DD
= 15ns
= ∞
= 15ns
= ∞
= 10ns
= ∞
= 15ns
= ∞
4
are obtained with the output open state.
A1
A1
A2
A1
A2
A1
A2
A1
A2
A1
A2
A1
A2
A1
A2
A1
A1
A2
A1
A2
Speed
DD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-6
-7
-7
-6
-7
-7
-6
-7
-7
and GND for each memory chip
Min.
2.4
–5
–5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
145
130
100
110
150
130
150
0.4
95
85
20
15
15
30
25
25
—
5
5
2
4
1
3
7
7
5
5
2
01/13/2010
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
Rev. F
V
V