SBC807-40WT1G ON Semiconductor, SBC807-40WT1G Datasheet - Page 7

• Manufacturer Part Number: SBC807-40WT1G
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 45V
• Manufacturer: ON Semiconductor

Specifications of SBC807-40WT1G

• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 45 V
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 0.7 V
• Maximum Dc Collector Current: - 500 mA
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 250 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-3
• Continuous Collector Current: - 500 mA
• Dc Current Gain Hfe Max: 600
• Maximum Power Dissipation: 460 mW
• Minimum Operating Temperature: - 55 C

1000
0.000001
100
10
1
D = 0.5
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W, BC807−40W, SBC807−40W
0.05
0.02
0.01
0.2
0.1
0.00001
Single Pulse
0.001
0.0001
0.01
0.1
1
0.1
V
CE
0.001
Figure 17. Safe Operating Area
, COLLECTOR EMITTER VOLTAGE (V)
Figure 18. Thermal Response
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1
Thermal Limit
0.01
t, PULSE TIME (s)
1 S
100 mS
7
10 mS
10
0.1
1 mS
1
100
10
100
1000