SBC807-40WT1G ON Semiconductor, SBC807-40WT1G Datasheet - Page 3

• Manufacturer Part Number: SBC807-40WT1G
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 45V
• Manufacturer: ON Semiconductor

Specifications of SBC807-40WT1G

• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 45 V
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 0.7 V
• Maximum Dc Collector Current: - 500 mA
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 250 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-3
• Continuous Collector Current: - 500 mA
• Dc Current Gain Hfe Max: 600
• Maximum Power Dissipation: 460 mW
• Minimum Operating Temperature: - 55 C

500
400
300
200
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.001
0.0001
Figure 3. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
Figure 1. DC Current Gain vs. Collector
I
C
/I
B
= 10
I
I
0.001
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.01
Collector Current
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
Current
1000
100
0.01
10
0.1
Figure 5. Current Gain Bandwidth Product vs.
V
T
0.1
A
CE
= 25°C
= 1 V
V
−55°C
0.1
25°C
150°C
CE
I
C
1
, COLLECTOR CURRENT (A)
= 1 V
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Collector Current
1
1
10
3
0.01
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1
0.001
0.0001
Figure 2. Collector Emitter Saturation Voltage
100
Figure 4. Base Emitter Voltage vs. Collector
V
I
C
CE
/I
B
= 5 V
= 10
0.001
I
I
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
vs. Collector Current
1000
0.01
Current
0.01
−55°C
150°C
25°C
25°C
0.1
150°C
0.1
−55°C
1
1