SBC807-40WT1G ON Semiconductor, SBC807-40WT1G Datasheet - Page 4

• Manufacturer Part Number: SBC807-40WT1G
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 45V
• Manufacturer: ON Semiconductor

Specifications of SBC807-40WT1G

• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 45 V
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 0.7 V
• Maximum Dc Collector Current: - 500 mA
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 250 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-3
• Continuous Collector Current: - 500 mA
• Dc Current Gain Hfe Max: 600
• Maximum Power Dissipation: 460 mW
• Minimum Operating Temperature: - 55 C

+1.0
-1.0
-2.0
0
-1.0
q
VB
for V
Figure 7. Temperature Coefficients
BE
q
VC
for V
I
C
-10
, COLLECTOR CURRENT
CE(sat)
TYPICAL CHARACTERISTICS − BC807−25W, SBC807−25W
-1.0
-0.8
-0.6
-0.4
-0.2
-0.01
0
I
C
-100
= -10 mA
Figure 6. Saturation Region
-0.1
I
C
I
http://onsemi.com
B
= -100 mA
, BASE CURRENT (mA)
-1000
-1.0
4
I
C
= -300 mA
100
1.0
10
-0.1
-10
I
-500 mA
T
C
J
=
= 25°C
V
Figure 8. Capacitances
R
, REVERSE VOLTAGE (VOLTS)
-1.0
-100
C
ib
-10
C
ob
-100