30C02CH-TL-E ON Semiconductor, 30C02CH-TL-E Datasheet - Page 4

• Manufacturer Part Number: 30C02CH-TL-E
• Description: Transistors Bipolar - BJT BIP NPN 0.7A 30V
• Manufacturer: ON Semiconductor

Specifications of 30C02CH-TL-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 0.85 V
• Maximum Dc Collector Current: 1.4 A
• Gain Bandwidth Product Ft: 540 MHz
• Dc Collector/base Gain Hfe Min: 300 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-59
• Continuous Collector Current: 700 mA
• Dc Current Gain Hfe Max: 800
• Maximum Power Dissipation: 700 mW
• Minimum Operating Temperature: - 55 C

30C02CH
Embossed Taping Specifi cation
30C02CH-TL-E
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