30C02CH-TL-E ON Semiconductor, 30C02CH-TL-E Datasheet - Page 2

• Manufacturer Part Number: 30C02CH-TL-E
• Description: Transistors Bipolar - BJT BIP NPN 0.7A 30V
• Manufacturer: ON Semiconductor

Specifications of 30C02CH-TL-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 0.85 V
• Maximum Dc Collector Current: 1.4 A
• Gain Bandwidth Product Ft: 540 MHz
• Dc Collector/base Gain Hfe Min: 300 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-59
• Continuous Collector Current: 700 mA
• Dc Current Gain Hfe Max: 800
• Maximum Power Dissipation: 700 mW
• Minimum Operating Temperature: - 55 C

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
I C =20I B1 = --20I B2 =300mA
Ordering Information
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
30C02CH-TL-E
INPUT
PW=20μs
D.C.≤1%
700
600
500
400
300
200
100
0
0
100
Device
50Ω
V BE = --5V
V R
Collector-to-Emitter Voltage, V CE -- mV
Parameter
200
I B1
220μF
300
I B2
R B
+
I C -- V CE
400
500
470μF
V CC =12V
+
600
I CBO
I EBO
h FE
f T
Cob
V CE (sat)
V BE (sat)
V (BR)CBO
V (BR)CEO
V (BR)EBO
t on
t stg
t f
OUTPUT
R L
Symbol
700
Package
CPH3
800
400μA
200μA
V CB =30V, I E =0A
V EB =4V, I C =0A
V CE =2V, I C =50mA
V CE =10V, I C =50mA
V CB =10V, f=1MHz
I C =200mA, I B =10mA
I C =200mA, I B =10mA
I C =10μA, I E =0A
I C =1mA, R BE =∞
I E =10μA, I C =0A
See specifi ed Test Circuit.
900
I B =0
IT05082
1000
30C02CH
Conditions
3,000pcs./reel
Shipping
800
700
600
500
400
300
200
100
0
0
0.2
Base-to-Emitter Voltage, V BE -- V
min
I C -- V BE
0.4
300
40
30
5
Ratings
typ
Pb Free
memo
0.6
540
255
3.3
0.9
85
35
40
max
0.8
100
100
800
190
1.2
V CE =2V
No.7363-2/6
IT05083
MHz
Unit
mV
nA
nA
pF
ns
ns
ns
V
V
V
V
1.0