30C02CH-TL-E ON Semiconductor, 30C02CH-TL-E Datasheet - Page 3

• Manufacturer Part Number: 30C02CH-TL-E
• Description: Transistors Bipolar - BJT BIP NPN 0.7A 30V
• Manufacturer: ON Semiconductor

Specifications of 30C02CH-TL-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 0.85 V
• Maximum Dc Collector Current: 1.4 A
• Gain Bandwidth Product Ft: 540 MHz
• Dc Collector/base Gain Hfe Min: 300 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-59
• Continuous Collector Current: 700 mA
• Dc Current Gain Hfe Max: 800
• Maximum Power Dissipation: 700 mW
• Minimum Operating Temperature: - 55 C

1000
1000
100
100
1.0
1.0
0.1
10
10
10
7
5
3
2
7
5
3
2
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
1.0
1.0
1.0
0.1
f=1MHz
2
2
2
3
3
2
Collector-to-Base Voltage, V CB -- V
5
5 7
3
Collector Current, I C -- mA
Collector Current, I C -- mA
3
7
Base Current, I B -- mA
10
10
V CE (sat) -- I C
5
Cob -- V CB
h FE -- I C
Ron -- I B
5
7
2
2
IN
1.0
3
3
7
5 7
5 7
10
1kΩ
1kΩ
I B
100
100
2
3
2
2
2
I C / I B =50
3
3
V CE =2V
f=1MHz
5
3
OUT
IT05084
IT05086
IT05088
IT06793
5 7
5 7
7
30C02CH
1000
1000
10
5
1000
1000
100
100
800
700
600
500
400
300
200
100
1.0
0.1
1.0
10
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
1.0
1.0
1.0
0
2
2
2
20
3
3
3
Ambient Temperature, Ta -- °C
5
5
5 7
40
Collector Current, I C -- mA
Collector Current, I C -- mA
Collector Current, I C -- mA
7
7
10
10
10
V CE (sat) -- I C
V BE (sat) -- I C
60
P C -- Ta
f T -- I C
2
2
2
3
3
3
80
5 7
5 7
5 7
100
100
100
100
120
2
2
2
I C / I B =20
No.7363-3/6
I C / I B =20
V CE =10V
3
3
3
140
IT05085
5 7
IT05087
IT05089
IT05091
5 7
5 7
1000
1000
1000
160