IS43R16800C-5TL ISSI, Integrated Silicon Solution Inc, IS43R16800C-5TL Datasheet - Page 11

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IS43R16800C-5TL

Manufacturer Part Number
IS43R16800C-5TL
Description
IC DDR SDRAM 128MBIT 66TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS43R16800C-5TL

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (8Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS43R16800C
IC43R16800C
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
10/13/08
Parameter
Write recovery time
Auto precharge write recovery and
precharge time
Internal write to Read command
delay
Average periodic refresh interval
Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter
2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal
3. The timing reference level is VTT.
4. Output valid window is defined to be the period between two successive transition of data out or DQS
5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The
6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This
7. Input valid windows is defined to be the period between two successive transition of data input or DQS
8. The timing reference level is VREF.
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific
10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not
11. tCK = tCK (min) when these parameters are measured. Otherwise, absolute minimum values of these
12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than
13. tDAL = (tWR/tCK)+(tRP/tCK)
definitions, see ‘Timing Waveforms’ section.
transition is defined to occur when the signal level crossing VTT.
(read) signals. The signal transition is defined to occur when the signal level crossing VTT.
timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage
level, but specify when the device output stops driving.
parameter is not referred to a specific DOUT voltage level, but specify when the device output begins
driving.
(write) signals. The signal transition is defined to occur when the signal level crossing VREF.
reference voltage to judge this transition is not given.
assured.
values are 10% of tCK.
0.4V/400 cycle.
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For –5C Speed at CL = 3, tCK = 5ns, tWR = 15ns and tRP= 18ns,
tDAL = (15ns/5ns) + (18ns/5ns) = (3) + (4)
tDAL = 7 clocks
Symbol
tWR
tDAL
tWTR
tREF
min.
15
(tWR/tCK)+
(tRP/tCK)
1
-6
15.6
max .
min.
15
(tWR/tCK)+
(tRP/tCK)
1
-7
15.6
max
ns
tCK 13
Unit Notes
tCK
µs
11

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