PBSS4260PANP,115 NXP Semiconductors, PBSS4260PANP,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS4260PANP,115
• Description: Transistors Bipolar - BJT 60V 2A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4260PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 70 mV, - 100 mV
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 140 MHz, 100 MHz
• Dc Collector/base Gain Hfe Min: 290, 170
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 2 A
• Dc Current Gain Hfe Max: 430, 250
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
10. Characteristics
Table 7.
PBSS4260PANP
Product data sheet
Fig. 9.
Symbol
TR1 (NPN)
I
I
h
V
CBO
EBO
FE
CEsat
Z
(K/W)
th(j-a)
10
10
1
2
10
4-layer PCB 70 µm, mounting pad for collector 1 cm
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
-5
0.75
0.33
0.1
0.02
duty cycle = 1
Characteristics
0
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
0.05
0.5
0.2
10
-4
0.01
10
-3
Conditions
All information provided in this document is subject to legal disclaimers.
V
V
V
V
t
V
t
V
δ ≤ 0.02 ; T
V
δ ≤ 0.02 ; T
I
I
t
I
t
I
t
p
p
C
C
p
C
p
C
p
CB
CB
EB
CE
CE
CE
CE
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 5 V; I
= 48 V; I
= 48 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
10
-2
B
B
B
12 December 2012
amb
amb
= 50 mA; pulsed;
= 100 mA; pulsed;
= 200 mA; pulsed;
C
C
C
C
C
E
E
= 0 A; T
= 100 mA; pulsed;
= 500 mA; pulsed;
= 1 A; pulsed; t
= 2 A; pulsed; t
B
= 0 A; T
= 0 A; T
= 25 °C
= 25 °C
= 50 mA; T
10
2
-1
amb
amb
j
amb
amb
amb
amb
amb
= 150 °C
60 V, 2 A NPN/PNP low VCEsat (BISS) transistor
= 25 °C
= 25 °C
amb
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
p
p
≤ 300 µs;
≤ 300 µs;
= 25 °C
1
10
Min
-
-
-
290
210
120
50
-
-
-
-
PBSS4260PANP
10
Typ
-
-
-
430
310
185
85
70
140
270
255
2
© NXP B.V. 2012. All rights reserved
t
p
006aad171
(s)
Max
100
50
100
-
-
-
-
90
180
350
330
10
3
Unit
nA
µA
nA
mV
mV
mV
mV
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