PBSS4260PANP,115 NXP Semiconductors, PBSS4260PANP,115 Datasheet - Page 10

• Manufacturer Part Number: PBSS4260PANP,115
• Description: Transistors Bipolar - BJT 60V 2A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4260PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 70 mV, - 100 mV
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 140 MHz, 100 MHz
• Dc Collector/base Gain Hfe Min: 290, 170
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 2 A
• Dc Current Gain Hfe Max: 430, 250
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4260PANP
Product data sheet
Symbol
R
V
V
t
t
t
t
t
t
f
C
TR2 (PNP)
I
I
h
V
d
r
on
s
f
off
T
CBO
EBO
FE
BEsat
BEon
CEsat
CEsat
c
Parameter
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
Conditions
All information provided in this document is subject to legal disclaimers.
I
t
I
I
t
I
t
I
t
V
t
V
I
V
T
V
f = 1 MHz; T
V
V
V
V
t
V
t
V
t
V
t
I
t
I
t
C
p
C
C
p
C
p
C
p
p
Boff
p
p
p
p
C
p
C
p
amb
CE
CC
CE
CB
CB
CB
EB
CE
CE
CE
CE
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
= 1 A; I
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= -500 mA; I
= -1 A; I
= -50 mA; T
= -5 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= -48 V; I
= -48 V; I
= -2 V; I
= -2 V; I
= -2 V; I
= -2 V; I
= 12.5 V; I
= 25 °C
B
B
B
B
B
12 December 2012
= 100 mA; pulsed;
= 50 mA; pulsed;
= 100 mA; pulsed;
= 200 mA; pulsed;
C
= -50 mA; pulsed;
amb
C
C
C
C
C
C
E
= 0.5 A; pulsed;
E
E
B
= 0 A; T
= -100 mA; pulsed;
= -500 mA; pulsed;
= -1 A; pulsed;
= -2 A; pulsed;
= 0 A; i
= 50 mA; f = 100 MHz;
B
C
= 0 A; T
= 0 A; T
= 50 mA; T
amb
= 25 °C
= -50 mA; pulsed;
= 1 A; I
= 25 °C
e
amb
= 0 A;
amb
j
amb
amb
amb
amb
amb
amb
amb
amb
amb
amb
amb
Bon
= 150 °C
60 V, 2 A NPN/PNP low VCEsat (BISS) transistor
= 25 °C
amb
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 50 mA;
= 25 °C
Min
-
-
-
-
-
-
-
-
-
-
-
-
70
-
-
-
-
170
140
110
50
-
-
PBSS4260PANP
Typ
-
-
-
-
-
-
10
140
150
445
180
625
140
6.5
-
-
-
250
200
155
75
-100
-220
© NXP B.V. 2012. All rights reserved
Max
165
1
1
1.1
1.2
0.9
-
-
-
-
-
-
-
9
-100
-50
-100
-
-
-
-
-140
-310
Unit
mΩ
V
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
nA
µA
nA
mV
mV
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