IS42S16100E-7TLI ISSI, Integrated Silicon Solution Inc, IS42S16100E-7TLI Datasheet - Page 6

• Manufacturer Part Number: IS42S16100E-7TLI
• Description: IC SDRAM 16MBIT 143MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100E-7TLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 50-TSOPII
• Organization: 1Mx16
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 50
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1072; IS42S16100E-7TLI

6
IS42S16100E, IS45S16100E
DC RECOMMENDED OPERATING CONDITION
(
+105
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
4. V
ABSOLUTE MAXIMUM RATINGS
At T
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Symbol
V
V
V
V
P
I
T
T
V
ih
il
cs
Symbol
opr
out
stg
iN
iN
DD max
DDq max
iN
D max
a
DD
o
(min) = V
(max) = V
C for A2 temperature)
1
2
= 0
V
V
, V
ih
il
o
DDq
C to +70
DDq
DDq
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: DQ0-DQ15
- 1.2V with a pulse width ≤ 3 ns.
o
+ 1.2V with a pulse width ≤ 3 ns.
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
C for Commercial temperature, T
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
(4)
(3)
(1)
(1,2)
Min.
-0.3
3.0
2.0
(At T
a
= -40
a
= 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
o
C to +85
Typ.
3.3
—
—
(2)
o
C for Industrial and A1 temperature, T
V
Integrated Silicon Solution, Inc. — www.issi.com
DD
Max.
+0.8
Commerical
3.6
+ 0.3
Industrial
A1
A2
Unit
V
V
V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–55 to +150 °C
-40 to +105
-40 to +85
-40 to +85
0 to +70
Rating
50
Typ.
1
—
—
—
Unit
W
mA
°C
°C
°C
°C
Max.
4
4
5
a
= -40
Unit
o
pF
pF
pF
C to
05/18/2010
Rev. E