IS61WV5128BLL-10BLI-TR ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10BLI-TR Datasheet - Page 16

• Manufacturer Part Number: IS61WV5128BLL-10BLI-TR
• Description: IC SRAM 4MBIT 10NS 36MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV5128BLL-10BLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-MBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
HIGH SPEED (IS61WV5128ALL/BLL)
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
16
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
Symbol
V
I
t
t
dr
dr
sdr
rdr
sdr
rdr
dr
dr
Typical values are measured at V
Typical values are measured at V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
CE
dd
dd
V
V
DD
DR
for Data Retention
for Data Retention
dd
dd
= 3.0V, T
= 1.8V, T
t
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
A
A
dd
dd
= 25
= 25
(CE Controlled)
= 2.0V, CE ≥ V
= 1.2V, CE ≥ V
o
o
C and not 100% tested.
C and not 100% tested.
dd
dd
Data Retention Mode
CE ≥ V
– 0.2V
– 0.2V
DD
- 0.2V
Integrated Silicon Solution, Inc. — www.issi.com
(2.4V-3.6V)
(1.65V-2.2V)
Options
Options
Com.
Com.
Auto.
Ind.
Ind.
Min.
Min.
2.0
t
1.2
t
—
—
—
—
rC
rC
0
0
t
RDR
Typ.
Typ.
—
—
—
—
—
—
—
—
2
2
(1)
(1)
Max.
Max.
3.6
3.6
15
—
—
—
—
6
8
6
8
Unit
Unit
mA
mA
ns
ns
ns
ns
V
V
08/10/09
Rev. I