IS61WV5128BLL-10BLI-TR ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10BLI-TR Datasheet - Page 12

• Manufacturer Part Number: IS61WV5128BLL-10BLI-TR
• Description: IC SRAM 4MBIT 10NS 36MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV5128BLL-10BLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-MBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
WRITE CYCLE SWITCHING CHARACTERISTICS
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output load-
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one
12
Symbol
ing specified in Figure 1.
can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that
terminates the write. Shaded area product in development
Notes:
t
t
t
t
t
t
t
t
t
t
t
wC
sCe
Aw
hA
sA
Pwe
Pwe
sd
hd
hzwe
lzwe
1
2
(2)
(2)
Parameter
Write Cycle Time
CE to Write End
Address Setup Time
to Write End
Address Hold from Write End
Address Setup Time
WE Pulse Width (OE = HIGH)
WE Pulse Width (OE = LOW)
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
Min.
6.5
6.5
6.5
8.0
—
8
0
0
5
0
2
-8
Max.
3.5
—
—
—
—
—
—
—
—
—
—
(1,3)
(Over Operating Range)
Integrated Silicon Solution, Inc. — www.issi.com
Min.
10
10
—
8
8
0
0
8
6
0
2
-10
Max.
—
—
—
—
—
—
—
—
—
—
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
08/10/09
Rev. I