SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 7
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SI3588DV-T1
Manufacturer Part Number
SI3588DV-T1
Description
MOSFET 20V 3.0/2.2A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI3588DV-T1.pdf
(12 pages)
Specifications of SI3588DV-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.5 A, 0.57 A
Resistance Drain-source Rds (on)
0.08 Ohms, 0.145 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Fall Time
30 ns at N Channel, 29 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
830 mW
Rise Time
30 ns at N Channel, 29 ns at P Channel
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
28 ns at N Channel, 24 ns at P Channel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY
Quantity:
118
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3588DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71332.
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
-2
Square Wave Pulse Duration (s)
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
t
DM
2
Z
Vishay Siliconix
thJA
thJA
100
(t)
t
t
1
2
= 130 °C/W
Si3588DV
www.vishay.com
600
10
7