SI3588DV-T1 Vishay/Siliconix, SI3588DV-T1 Datasheet - Page 4
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SI3588DV-T1
Manufacturer Part Number
SI3588DV-T1
Description
MOSFET 20V 3.0/2.2A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI3588DV-T1.pdf
(12 pages)
Specifications of SI3588DV-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.5 A, 0.57 A
Resistance Drain-source Rds (on)
0.08 Ohms, 0.145 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Fall Time
30 ns at N Channel, 29 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
830 mW
Rise Time
30 ns at N Channel, 29 ns at P Channel
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
28 ns at N Channel, 24 ns at P Channel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY
Quantity:
118
Part Number:
SI3588DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3588DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3588DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.1
- 0.2
- 0.3
- 0.4
0.1
0.2
0.1
0.0
0.1
10
1
2
1
- 50
0.00
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
0.2
V
0
T
SD
J
I
Threshold Voltage
D
T
= 150 °C
10
0.4
- Source-to-Drain Voltage (V)
J
= 250 µA
-3
- Temperature (°C)
25
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
T
J
-2
100
= 25 °C
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10
-1
1
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
V
DM
GS
JM
0.1
- Gate-to-Source Voltage (V)
- T
A
t
1
= P
Time (s)
2
t
I
2
DM
D
S09-2275-Rev. B, 02-Nov-09
= 3.0 A
Z
thJA
Document Number: 71332
thJA
100
(t)
t
t
1
2
1
= 130 °C/W
3
4
600
10
30
5