SI4431BDY-T1 Vishay/Siliconix, SI4431BDY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4431BDY-T1
• Description: MOSFET 30V 7.5A 1.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4431BDY-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Resistance Drain-source Rds (on): 30 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 10 ns
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 70 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
Source-Drain Diode Forward Voltage
GS
= 7.5 A
0.2
On-Resistance vs. Drain Current
5
= 15 V
= 4.5 V
5
V
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
10
I
D
T
- Drain Current (A)
Gate Charge
J
10
= 150 °C
0.6
15
0.8
15
20
T
J
1.0
= 25 °C
V
GS
20
= 10 V
25
1.2
30
25
1.4
1600
1400
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 7.5 A
I
D
= 10 V
= 2 A
2
6
V
V
GS
DS
0
T
C
J
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2 5
Capacitance
12
4
C
5 0
I
D
Vishay Siliconix
iss
= 7.5 A
Si4431BDY
18
6
7 5
www.vishay.com
100
24
8
125
150
10
30
3