SI4431BDY-T1 Vishay/Siliconix, SI4431BDY-T1 Datasheet
SI4431BDY-T1
Specifications of SI4431BDY-T1
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SI4431BDY-T1 Summary of contents
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... Si4431BDY-T1-E3 (Lead (Pb)-free) Ordering Information: Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si4431BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72092 S09-0131-Rev. C, 02-Feb- °C J 0.8 1.0 1.2 1.4 Si4431BDY Vishay Siliconix 1600 1400 1200 C 1000 iss 800 600 400 C oss C rss 200 Drain-to-Source Voltage (V) DS Capacitance 1 ...
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... Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 emperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited by R DS(on D(on) 1 Limited °C A 0.1 Single Pulse BVDSS Limited 0 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72092. Document Number: 72092 S09-0131-Rev. C, 02-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4431BDY Vishay Siliconix -1 1 www.vishay.com 10 5 ...
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SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...
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... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...
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Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...