SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet - Page 6

• Manufacturer Part Number: SI5504DC-T1
• Description: MOSFET 30V 3.9/2.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI5504DC-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A, 2.8 A
• Resistance Drain-source Rds (on): 85 mOhms, 165 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 12 ns at N Channel, 11 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 12 ns at N Channel, 11 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 12 ns at N Channel, 14 ns at P Channel

Si5504DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.2
- 0.4
0.6
0.4
0.2
0.0
10
0.1
10
8
6
4
2
0
- 50
0
0
- 25
V
I
D
Source-Drain Diode Forward Voltage
DS
= 2.1 A
1
= 15 V
0.3
V
0
SD
I
Q
D
g
Threshold Voltage
= 250
T
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
2
T
J
J
25
- Temperature (°C)
Gate Charge
= 150 °C
0.6
µA
50
3
0.9
75
4
T
100
J
= 25 °C
1.2
5
125
150
1.5
6
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
- 50
10
0
-4
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
10
V
I
D
GS
-3
= 2.1 A
2
V
= 10 V
GS
0
T
10
J
- Gate-to-Source Voltage (V)
Single Pulse Power
- Junction Temperature (°C)
-2
25
4
10
Time (s)
-1
S10-0547-Rev. C, 08-Mar-10
50
Document Number: 71056
I
D
= 2.1 A
1
6
75
10
100
8
125
100
10
600
150