SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet - Page 11

• Manufacturer Part Number: SI5504DC-T1
• Description: MOSFET 30V 3.9/2.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI5504DC-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A, 2.8 A
• Resistance Drain-source Rds (on): 85 mOhms, 165 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 12 ns at N Channel, 11 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 12 ns at N Channel, 11 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 12 ns at N Channel, 14 ns at P Channel

Application Note 826
Vishay Siliconix
®
RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET
0.093
(2.357)
0.026
0.016
0.010
(0.650)
(0.406)
(0.244)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72593
2
Revision: 21-Jan-08