SI1013X-T1 Vishay/Siliconix, SI1013X-T1 Datasheet - Page 7

• Manufacturer Part Number: SI1013X-T1
• Description: MOSFET 20V 0.35A 0.25W
• Manufacturer: Vishay/Siliconix

Specifications of SI1013X-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.35 A
• Resistance Drain-source Rds (on): 1.2 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-89-3
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 mW
• Rise Time: 9 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns

Document Number: 71377
06-Jul-01
1
e1
D
e
3
2
b
E
H
X
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5869
Dim
e
A
C
D
E
H
e
L
b
1
A
Package Information
Min
0.60
0.23
0.10
1.50
0.75
1.50
0.30
1.00 BSC
0.50 BSC
DETAIL X
Vishay Siliconix
Max
0.80
0.33
0.20
1.70
0.95
1.70
0.50
L
0.024
0.009
0.004
0.059
0.030
0.059
0.012
Min
0.040 BSC
0.020 BSC
www.vishay.com
Max
0.031
0.013
0.008
0.067
0.037
0.067
0.020
C
1